Microelectronics

Organic Electronics: Materials, Manufacturing, and by Hagen Klauk

By Hagen Klauk

Edited and written through the major researchers and engineers from such businesses as Philips, 3M, Xerox, Infineon, PlasticLogic, Eastman Kodak, Dupont, AIXTRON, and Hueck Folien, this publication offers unrivalled and undiluted services from those that be aware of top find out how to check the dangers, possibilities and the place this expertise is admittedly heading.As such, this functional method enhances the extra medical and fundamentals-oriented literature out there via offering readers with a first-hand perception into commercial actions to commercialize natural electronics. Following an advent to the subject, together with the heritage, motivation, merits and potentials, it studies contemporary advances and covers all 3 vital elements of natural electronics: the chemicals and fabrics, production ideas, and the ensuing units including their present functions.

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Kahn, N. Koch, W. Gao, J. Polym. Sci. B, Polym. Phys. 2003, 41, 2529– 2548. R. B. Campbell, J. M. Robertson, J. Trotter, Acta Cryst. 1961, 14, 705– 711. D. Holmes, S. Kumaraswamy, A. J. Matzger, K. P. C. Vollhardt, Chem. Eur. J. 1999, 5, 3399–3412. B. Servet, G. Horowitz, S. Ries, O. 2 3 4 5 6 7 8 9 10 11 12 13 14 16 17 18 19 20 21 22 23 24 25 26 27 29 30 1 Organic Transistors 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 Lagorsse, P. Alnot, A. Yassar, F. Deloffre, P. Srivastava, R. Hajlaoui, P.

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2 Overview of the Organic Thin-film Transistor Let d be the thickness of a monolayer and n the total number of layers (that is, the thickness of the film divided by d). The layers are numbered starting from the insulator–semiconductor interface. To estimate the density ni (per unit area) of charge-carriers in the ith layer we apply Gauss’s law to a cylinder of unit cross section limited by the boundaries between the ith layer and each of its neighboring layers. For a long channel device, the electric field F is perpendicular to the film, and we have: FiÀ1 À Fi ¼ À qni es ð6Þ where Fi is the module of the electric field at the boundary between the ith and the ði þ 1Þth layers.

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