MEMS Cost Analysis: From Laboratory to Industry by Ron Lawes

By Ron Lawes

MEMS items have constructed during the last two decades to develop into hugely expense aggressive particularly than just novel. whereas price research for semiconductor layout and manufacture is easily confirmed, it truly is much less so for MEMS.

This quantity seeks to teach how expense research should be tailored to MEMS, bearing in mind the wide variety of tactics and gear, the most important transformations with the verified semiconductor undefined, and the presence of either large-scale, product-orientated brands and small- and medium-scale foundries.

The content material examines the techniques and gear sufficiently for the reader to understand how charges come up. applicable courses are referenced in order that such technical information might be tested intimately, outdoor the confines of fee research. consultant bills are tested in enough aspect and accuracy for particular gear, tactics, items, or foundries to teach how monetary types should be brought to estimate the price and value for a MEMS product.

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The wafer is coated with an optical resist, for example, AZ9260 (Microchem, 2011), which has a sensitivity of 500 mJ/cm2 . The exposure time would be 20 seconds, which, allowing for a wafer handling and registration overhead of 35 seconds, results in a throughput of 45 wafers/hour. 1. The ability to align to the bottom side of the wafer, referred to as ‘double-side alignment’, has been added to the original design of wafer aligners, thus allowing more flexibility in MEMS design. One implementation (SUSS, 2011) uses cross-hair alignment marks on the bottom side of the wafer viewed through a second objective lens on the wafer aligner.

The resolution of a stepper lens (R) can be calculated from Eq. 2 and is shown graphically in Fig. 5. The resolution and typical numerical aperture are also shown for the i-line and laser source, where, to reduce resolution, the mercury lamp source has been replaced with an excimer laser that has a shorter wavelength (λ). Typical laser wavelengths are 248 nm (krypton fluoride) and 193 nm (argon fluoride). The resolution and depth of focus (DoF) are given by Eq. 2 and Eq. 3, respectively. 5 Resolution as a function of the numerical aperture of the projection lens.

5 mm Un-exposed resist which is removed by development. Optical chrome on quartz mask plates—negative-acting resist. 3 Layout of a wafer aligner mask. so processing must be done in so-called ‘yellow’ rooms, where the wavelength of the ambient light is outside the sensitivity range of the resists (Microchem, 2011). The process of lithography, resist exposure and processing, deposition and/or etching is repeated to fabricate each layer of the microsystem, thus building up the three-dimensional structure of the device.

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