By Pallab Chatterjee
Legacy information: A dependent method For machine Migration in DSM Technology bargains with the migration of present demanding IP from one expertise to a different utilizing repeatable approaches. The problem of not easy IP migration isn't really easily an EDA challenge yet fairly a shopper software specification challenge. It calls for a deep knowing of the method applied sciences, EDA instruments (and their interfaces) and aim purposes.
Legacy information: A dependent method For equipment Migration in DSM Technology is exclusive in that there are at the moment no reference books interested in legacy information reuse, specially for difficult IP. This ebook will enable CAD practitioners to quick increase methodologies that capitalize at the huge volumes of legacy information to be had inside an organization this present day. It information the problems of constructing a established method, development verification try benches, and validating the ultimate actual design.
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Extra resources for Legacy Data: A Structured Methodology for Device Migration in DSM Technology
The new gate material options include Molybdenum (Mo), Silicon Germanium (SiGe) gates, multiple metal gate options such as Titanium (Ti), Tungsten (W), Ruthenium-Tantalum (Ru-Ta) alloy, Zirconium-Aluminum (Zr-AI) alloy and more exotic vertical gate and fin- gate structures. The standard new target for 130nm and 90nm processes is a silicided heavily doped polysilicon gate. This new collection of gate materials is addressing the problem of PolySi gate depletion. Gate depletion affects device performance by dynamically modifying the effective dielectric thickness of the gate, which reduces the speed and performance of the devices.
This data cannot be recreated from an orphaned design block; it requires the existence of the test bench to provide a basis for extraction for the design information. The Input/Output definitions consist of both input and output waveform and load conditions for both time domain and AC characteristics of the product. For legacy data or IP blocks, that translates to the interaction and drive characteristics of the signal and power pins for the block. The 110 defmition is the main target for device level retargeting and simulation.
Chapter 7 50 Thus, ratio violations were rarely encountered in the design. If there were any violations, the process geometries allowed for insertion of gate tie down diodes without major impact on the layout topologies. DSM SoCs are different. The very small gate lengths and the large chip size now require that antenna effects be addressed from the cell design level on up through the hierarchy. The fixes also require diode areas that are now significant and impact the layout topology architecturally.