Integrated Interconnect Technologies for 3D Nanoelectronic by Muhannad S Bakir, Professor James D Meindl

By Muhannad S Bakir, Professor James D Meindl

Cutting-edge microchips have approximately reached their functionality limits. quite a few warmth elimination, energy supply, chip reliability, and input/output (I/O) signaling difficulties stand within the means of next-generation 3D gigascale, system-on-a-chip know-how, and this state of the art consultant describes the newest breakthroughs in microfluidics, high-density compliant electric interconnects, and nanophotonics which are converging to resolve them. Engineers get complete information on state of the art I/O interconnects and packaging, in addition to the newest advances and functions in energy supply layout, research, and modeling. The publication explores interconnect buildings, fabrics, and applications for reaching high-bandwidth off-chip electric communique. It brings readers in control with the newest warmth elimination applied sciences together with chip-scale microchannel cooling, built-in micropumps and fluidic channels, and carbon nanotube interconnects.

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Extra resources for Integrated Interconnect Technologies for 3D Nanoelectronic Systems (Integrated Microsystems)

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2. 2 25 Crack propagation in a multilevel interconnect. sive interest recently in investigating chip-package interaction (CPI) and its reliability impact on Cu/low-k structures [12–19]. 3. 4 to calculate the CPI-induced crack-driving force for interfacial delamination in the low-k interconnect structure. The chip-package interaction was found to be maximized at the die-attach step during packaging assembly and most detrimental to low-k chip reliability because of the high thermal load generated by the solder reflow process before underfilling.

The challenge of this technique resides in the crack length measurement, which is required for deducing the fracture energy for the DCB configuration. 9 Mixed-mode double cantilever beam test loading fixture. 9) thin-film structure. The measured interface toughness in general exhibits a trend to increase as the phase angle increases. It is understood that the shearing mode promotes inelastic deformation in the constituent materials and near-tip interface contact/sliding, both contributing to the energy dissipation during the crack growth [31].

This completes the fabrication of the microchannel heat sink. 8(d)]. 8(e). Finally, the polymer film is photodefined to yield the optical and fluidic I/Os simultaneously. Essentially, the trimodal I/Os are an extension of the wafer-level, batch-fabricated, on-chip multilayer interconnect network and represent a “third-era” chip I/O technology to address the tyranny of limits current silicon ancillary technologies impose. It is clear that in order to assemble a chip with trimodal I/Os, it is critical to have a substrate with trimodal planar interconnects.

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