Microelectronics

Electronics and Electrical Engineering by Alan Zhao (ed.)

By Alan Zhao (ed.)

The 2014 Asia-Pacific Electronics and electric Engineering convention (EEEC 2014) was held on December 27-28, 2014 in Shanghai, China. EEEC has supplied a platform for researchers, engineers, academicians in addition to business pros from world wide to offer their examine effects and improvement actions in Electronics and electric Engineering. This convention has given possibilities for the delegates to replace new rules and alertness stories nose to nose, to set up enterprise or study relatives and to discover worldwide companions for destiny collaboration. Submitted convention papers were reviewed by way of the Technical Committee of the convention.

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20 (2013) 17–22. [3] Karl Henrik Johansson, The Quadruple-Tank Process: A Multivariable Laboratory Process with an Adjustable Zero, IEEETransactions on Control SystemsTechnology. 8 (2000) 456–465. [4] Wang Lei, Tuo Xianguo, Yan Yucheng, etc, A GeneticAlgorithm-based Neural NetworkApproach for Radioactive Activity Prediction, Journal of Nuclear Science and Techniques. 24 (2013) 060201. [5] Zeng-Hui Zhu, Hui-Ying Sun, Application of PID Controller Based on BP Neural Network In Export Steam’s Temperature Control System, Journal of Measurement Science and Instrumentation.

When the power system has an excess charge, surplus electricity charges the battery after rectification. When solar power, wind power, and diesel power generation do not meet the load demand, the energy stored in the battery inverts for the load to use. mountains or islands, and everywhere therein. It is one of the cleanest sources of energy that can be directly developed and utilized without transportation. Figure 1 indicates monthly average solar radiation. 07 kwh/m2 /day. The appropriate power of PV modules configured to take advantage of local natural resources could be considered.

Interface reaction of a silicon substrate and lanthanum oxide films deposited by metalorganic chemical vapor deposition. Jpn. J. App. Phys. 41: L368–370. , Ishii, K. & Suzuki, E. 2003. MOCVD of high-dielectric-constant lanthanum oxide thin films, J. Electrochem. Soc. 150: G429–G435. This work is supported by the GRF Project #121212 of Research Grants Council of Hong Kong, Hong Kong. , Hattori, T. & Iwai, H. 2012. 62 nm and high electron mobility in La-silicate/Si structure based nMOSFETs achieved by utilizing metal-inserted poly-Si stacks and annealing at high temperature.

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