Microelectronics

Defects in semiconductors by Lucia Romano, Vittorio Privitera, Chennupati Jagadish

By Lucia Romano, Vittorio Privitera, Chennupati Jagadish

This quantity, quantity ninety one within the Semiconductor and Semimetals sequence, specializes in defects in semiconductors. Defects in semiconductors support to give an explanation for a number of phenomena, from diffusion to getter, and to attract theories on fabrics' habit based on electric or mechanical fields.

The quantity comprises chapters focusing in particular on electron and proton irradiation of silicon, aspect defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and lots more and plenty extra. it's going to aid help scholars and scientists of their experimental and theoretical paths.

  • Expert contributors
  • Reviews of crucial fresh literature
  • Clear illustrations
  • A vast view, together with exam of defects in numerous semiconductors

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1999. Boron-enhanced diffusion of boron: physical mechanisms. Appl. Phys. Lett. 74, 2331–2333. , 1988. Film stress-related vacancy supersaturation in silicon under low-pressure chemical vapor deposited silicon nitride films. J. Appl. Phys. 64, 4914–4919. , 1988. Diffusion of impurities from implanted silicon layers by rapid thermal annealing. Phys. Status Solidi A 110, K61–K65. , 2006a. A simulation model for the density of states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si:P.

Such Figure 3 Normalized impurity diffusion coefficient when the intrinsic point defects are in a nonequilibrium situation (CI =CIeq ¼ CVeq =CV 6¼ 1) for dopants with fractional diffusivities via self-interstitials fI as given in the legend. Role of Defects in the Dopant Diffusion in Si 27 gradients, as discussed already above, lead to a transport of dopant atoms in the direction of the flux of the intrinsic point defects. , by Rafferty et al. (1993) for a pile-up of dopants at the surface causing a reverse short-channel effect in MOSFETs.

Boron-enhanced diffusion of boron: physical mechanisms. Appl. Phys. Lett. 74, 2331–2333. , 1988. Film stress-related vacancy supersaturation in silicon under low-pressure chemical vapor deposited silicon nitride films. J. Appl. Phys. 64, 4914–4919. , 1988. Diffusion of impurities from implanted silicon layers by rapid thermal annealing. Phys. Status Solidi A 110, K61–K65. , 2006a. A simulation model for the density of states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si:P.

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