Microelectronics

Chip Scale Package: Design, Materials, Process, Reliability, by John H. Lau

By John H. Lau

The 1st accomplished, in-depth advisor to chip scale packaging, this reference grants state of the art details at the most crucial new improvement in digital packaging considering that floor mount expertise (SMT). that includes the newest layout options, plus info on greater than forty kinds of CSP, Chip Scale package deal fingers engineers and architects the whole, expert set of operating instruments that they should clear up technical and layout matters; locate the best, in your price range CSP suggestions for his or her deployments; solution questions about interfacing, pace, robustness, and extra; examine houses of wirebonds, turn chips, inflexible and flex substrates, wafer-level redistribution, and different CSP items; get the newest info on new choices from Fujitsu, GE, Hitachi, IBM, Matushita, Motorola, nationwide Semiconductor, NEC, Sharp, Sony, Toshiba, Amkor, TT, LG Semicon, Mitsubishi, Shell Case, Tessera, Samsung, and different significant businesses; and know about CSP items below improvement. A revolution in electronics, CSP is taking the electronics via typhoon. web page after web page, this standard-setting advisor can provide either crucial technical information and an eye-opening assessment of this fast-developing box. irrespective of the way you use Chip Scale package deal, youOll see why itOs the source of selection in case you are looking to be on the best of the sport.

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Another method is to deposit alternate layers of amorphous silicon at 570°C, which is tensile, and polysilicon at 615°C, which is compressive [4]. In surface micromachining, structures are generally released by wet etching the sacrificial layer followed by rinsing in water. This gives rise to capillary forces as the wafers are dried causing the structures to stick to the underlying substrate. Many methods for preventing this stiction have been developed. 15 Typical surface-micromachined structure: (a) oxide deposited and etched; (b) polysilicon deposited; (c) polysilicon patterned and etched to create access holes through to the oxide; and (d) oxide etched selectively in HF to leave freestanding polysilicon structures.

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231–239. , “Electrostatic Parallelogram Actuators,” Transducers ’91, San Francisco, CA, June 24–27, 1991, pp. 63–66. , D. Soane, and R. Howe, “Supercritical Carbon Dioxide Drying of Microstructures,” Transducers ’93, Yokahama, Japan, June 7–10, 1993, pp. 296–298. , “Dry Release for Surface Micromachining with HF Vapor-Phase Etching,” J. Microelectromech. , Vol. 6, 1997, pp. 226–233. , “A New Organic Modifier for Anti-Stiction,” J. Microelectromech. , Vol. 10, 2001, pp. 33–40. , “Dichlorodimethylsilane as an Anti-Stiction Monolayer for MEMS: A Comparison to the Octadecyltrichlosilane Self-Assembled Monolayer,” J.

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