Microelectronics

Carrier transport in nanoscale MOS transistors by Hideaki Tsuchiya, Yoshinari Kamakura

By Hideaki Tsuchiya, Yoshinari Kamakura

A finished complicated point exam of the delivery concept of nanoscale devices

  • Provides complicated point fabric of electron delivery in nanoscale units from easy rules of quantum mechanics via to complicated concept and numerous numerical strategies for electron transport
  • Combines a number of up to date theoretical and numerical methods in a unified demeanour, equivalent to Wigner-Boltzmann equation, the hot development of service shipping learn for nanoscale MOS transistors, and quantum correction approximations
  • The authors method the topic in a logical and systematic means, reflecting their large instructing and study backgrounds

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Extra info for Carrier transport in nanoscale MOS transistors

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13, the amount of which is the largest for biaxial strain and is the smallest for uniaxial <110 > strain. The present results are consistent with the previous results, based on the empirical n­ on‐ local pseudopotential method by Uchida et al. 18] and Ungersboeck et al. 20]. 13. As Uchida et al. 14(c). For comparison purposes, the computed mT values are compared with those of Uchida et al. 18] and Ungersboeck et al. 15. It is found that the trend of effective mass modulation due to uniaxial <110 > strain is the same for both methods, though the present first‐principles method predicts smaller variation in mT than the empirical non‐local pseudopotential method.

Obradovic, R. Kotlyar, S. Cea, M. D. Giles (Aug. 2006). Physics of hole transport in strained silicon MOSFET inversion layers. IEEE Transactions on Electron Devices 53(8), 1840–1851. 20] E. Ungersboeck, S. Dhar, G. Karlowatz, H. Kosina and S. Selberherr (2007). Physical modeling of electron mobility enhancement for arbitrarily strained silicon. Journal of Computational Electronics 6, 55–58. 21] J. Yamauchi (Feb. 2008). Effective mass anomalies in strained‐Si thin films and crystals. IEEE Electron Device Letters 29(2), 186–188.

Klimeck and M. Lundstrom (Mar. 2008). A tight‐binding study of the ballistic injection velocity for ultrathin‐body SOI MOSFETs. IEEE Transactions on Electron Devices 55(3), 866–871. 9] H. Scheel, S. Reich and C. Thomsen (Oct. 2005). Electronic band structure of high‐index silicon nanowires. Physica Status Solidi (B) 242(12), 2474–2479. H. Lu and D. Grozea (2002). Crystalline Si/SiO2 quantum wells. Applied Physics Letters 80(2), 255–257. 11] S. Markov, B. ‐Y. Yam, H. Xie, T. Frauenheim and G. Chen (Mar.

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